The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Aug. 20, 2009
Hirofumi Ohki, Akishima, JP;
Ayako Nishioka, Chiba, JP;
Takashi Ohkubo, Chiba, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
It is an object of the present invention to improve sensitivity of a resist made from hydrosilsesquioxane when a pattern is formed in the resist by irradiation with a charged particle beam. The method for improving sensitivity of a resist of the present invention is a method to improve sensitivity of a resist formed from hydrosilsesquioxane to a charged particle beam when a pattern is formed in the resist by irradiation with a charged particle beam, and is characterized by including prebaking a resist formed from hydrosilsesquioxane and applied onto a substrate at t° C. (20≦t≦300), applying a composition containing a water-soluble conductive polymer compound to a charged particle beam irradiation surface of the prebaked resist, baking the thus applied composition at T° C. (0≦T<t+40) and then irradiating the resist with a charged particle beam.