The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Sep. 17, 2008
Brent Allen Clothier, Niskayuna, NY (US);
Adrian Ivan, Niskayuna, NY (US);
Daniel Bruno Mcdevitt, Schenectady, NY (US);
Brent Allen Clothier, Niskayuna, NY (US);
Adrian Ivan, Niskayuna, NY (US);
Daniel Bruno McDevitt, Schenectady, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
A semiconductor material for radiation absorption and detection comprising a composition of stoichiometry Li(M, M, M, . . . )(G, G, G, . . . ) and exhibiting an antifluorite-type order, where Li=1, (M+M+M+ . . . )=1, and (G+G+G+ . . . )=1. The material provides two useful characteristics: [1] a high Li-site density, which when enriched inLi, produces exceptional neutron-absorbing capabilities and [2] a semiconducting band-gap for the efficient conversion of absorbed photon and neutron energies into electrical currents. These characteristics can be exploited in applications for power generation or the spectroscopic detection of gamma and neutron radiation. The material can be tailored so as to detect only gamma photons, detect only neutron particles, or simultaneously detect gamma photons and neutron particles.