The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Jul. 28, 2009
Shubao Guo, Suzhou, CN;
Jie Jin, Suzhou, CN;
Zhenguo Sun, Suzhou, CN;
Lei Tian, Suzhou, CN;
Xiaowen Wu, Shanghai, CN;
Shubao Guo, Suzhou, CN;
Jie Jin, Suzhou, CN;
Zhenguo Sun, Suzhou, CN;
Lei Tian, Suzhou, CN;
Xiaowen Wu, Shanghai, CN;
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A CMOS temperature detection circuit includes a start-up circuit for generating a start-up voltage (VN), and a proportional to absolute temperature (PTAT) current generator coupled to the start-up circuit for generating a PTAT current. The start-up voltage turns on the PTAT current generator, and the PTAT current generator uses the sub-threshold characteristics of CMOS to generate the PTAT current. A PTAT voltage generator coupled to the PTAT current generator receives the PTAT current and generates a PTAT voltage and an inverse PTAT voltage (VBE). A comparator circuit coupled to the voltage generator compares the inverse PTAT voltage to first and second alarm limits, which are defined using the generated PTAT voltage, and generates an alarm signal based on the comparison results.