The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
Apr. 27, 2010
Applicant:
Isao Naritake, Kanagawa, JP;
Inventor:
Isao Naritake, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 17/18 (2006.01);
U.S. Cl.
CPC ...
Abstract
An anti-fuse memory cell includes: a first transistor connected with a word line and configured to output a second voltage based on a first voltage supplied to the word line in a write mode; a second transistor connected with a bit line, and configured to output a third voltage supplied to the bit line when the second voltage is supplied to a gate of the second transistor in the write mode; and an anti-fuse element connected to a ground line, and having an insulator film. The insulator film is set to a conductive state with the third voltage supplied from the second transistor.