The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
Aug. 09, 2008
Guenter Gauglitz, Tuebingen, DE;
Guenther Proll, Denkendorf, DE;
Florian Proell, Rottenburg, DE;
Lutz Steinle, Oberteuringen, DE;
Markus Schubert, Tuebingen, DE;
Guenter Gauglitz, Tuebingen, DE;
Guenther Proll, Denkendorf, DE;
Florian Proell, Rottenburg, DE;
Lutz Steinle, Oberteuringen, DE;
Markus Schubert, Tuebingen, DE;
Biametrics Maken und Rechte GmbH, Tuebingen, DE;
Abstract
The invention relates to a carrier for a thin layer and a method for the analysis of molecular interactions on and/or in such a thin layer. A thin layer disposed on a carrier is illuminated with electromagnetic radiation from at least one radiation source and a reflected radiation part on boundary surfaces of the thin layer is detected by means of an optoelectronic converter that converts the detected radiation into a frequency- and intensity-dependant photocurrent. A reading voltage is applied to the optoelectronic converter. By changing the reading voltage, the spectral sensitivity of the optoelectronic converter is varied such that a substantially constant photocurrent is obtained. Alternatively or in addition to varying the spectral sensitivity by changing the reading voltage, the reflected radiation part is detected with an optoelectronic converter that is designed as a sensor layer in the carrier. The carrier is particularly characterized in that it comprises a substrate on which at least one sensor layer with optoelectronic properties is disposed.