The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2012

Filed:

Dec. 19, 2008
Applicants:

John T. Compton, LeRoy, NY (US);

Hirofumi Komori, Kanagawa, JP;

Inventors:

John T. Compton, LeRoy, NY (US);

Hirofumi Komori, Kanagawa, JP;

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H04N 5/335 (2006.01);
U.S. Cl.
CPC ...
Abstract

A CMOS image sensor or other type of image sensor comprises a pixel array and a signal generator coupled to the pixel array. The pixel array comprises a plurality of pixels each having a photosensitive element coupled to a transfer gate. The signal generator is configured to generate a transfer gate signal for application to at least one of the transfer gates. The transfer gate signal has at least an on state voltage level and first and second off state voltage levels, with the first off state voltage level typically having a higher magnitude than that of the second off state voltage level. In an illustrative embodiment, the second off state voltage level is utilized during a readout operation in order to reduce dark current in floating diffusion regions of the pixel array.


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