The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
Jun. 26, 2009
Jeevak M. Parpia, Ithaca, NY (US);
Harold G. Craighead, Ithaca, NY (US);
Joshua D. Cross, Ithaca, NY (US);
Bojan Robert Ilic, Ithaca, NY (US);
Maxim K. Zalalutdinov, Silver Spring, MD (US);
Jeffrey W. Baldwin, Alexandria, VA (US);
Brian H. Houston, Fairfax, VA (US);
Jeevak M. Parpia, Ithaca, NY (US);
Harold G. Craighead, Ithaca, NY (US);
Joshua D. Cross, Ithaca, NY (US);
Bojan Robert Ilic, Ithaca, NY (US);
Maxim K. Zalalutdinov, Silver Spring, MD (US);
Jeffrey W. Baldwin, Alexandria, VA (US);
Brian H. Houston, Fairfax, VA (US);
Cornell University, Ithaca, NY (US);
The United States of America as Represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A method for manufacturing or preparing thin-film stacks that exhibit moderate, finite, stress-dependent resistance and which can be incorporated into a transduction mechanism that enables simple, effective signal to be read out from a micro- or nano-mechanical structure. As the structure is driven, the resistance of the intermediate layers is modulated in tandem with the motion, and with suitable dc-bias, the motion is directly converted into detectable voltage. In general, detecting signal from MEMS or NEMS devices is difficult, especially using a method that is able to be integrated with standard electronics. The thin-film manufacturing or preparation technique described herein is therefore a technical advance in the field of MEMS/NEMS that could enable new applications as well as the ability to easily develop CMOS-MEMS integrated fabrication techniques. Also disclosed are: (i) transducers where current flows across a piezo layer from one major surface to the opposite major surface; and (ii) methods of making a transducer the resistivity of a piezoresistive layer is decreased and/or the gauge factor of a piezoresistive layer is increased.