The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
Jun. 10, 2011
Applicants:
Ralph Korenstein, Framingham, MA (US);
Steven D. Bernstein, Brighton, MA (US);
Stephen J. Pereira, Hopedale, MA (US);
Inventors:
Ralph Korenstein, Framingham, MA (US);
Steven D. Bernstein, Brighton, MA (US);
Stephen J. Pereira, Hopedale, MA (US);
Assignee:
Raytheon Company, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01);
U.S. Cl.
CPC ...
Abstract
In one aspect, a device includes a gallium nitride (GaN) layer, a first diamond layer disposed on the GaN layer, a gate structure disposed in contact with the GaN layer and the first diamond layer, and a second diamond layer having a first thermal conductivity and disposed on a second surface of the GaN layer. The gate and the first diamond layer are disposed on a first surface of the GaN layer opposite the second surface of the GaN layer.