The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
Sep. 12, 2008
Peter Stauss, Pettendorf, DE;
Matthias Peter, Alteglofsheim, DE;
Alexander Walter, Laaber, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Abstract
An optoelectronic semiconductor chip is specified, which has an active zone () containing a multi quantum well structure provided for generating electromagnetic radiation, which comprises a plurality of successive quantum well layers (). The multi quantum well structure comprises at least one first quantum well layer (), which is n-conductively doped and which is arranged between two n-conductively doped barrier layers () adjoining the first quantum well layer. It comprises a second quantum well layer (), which is undoped and is arranged between two barrier layers () adjoining the second quantum well layer, of which one is n-conductively doped and the other is undoped. In addition, the multi quantum well structure comprises at least one third quantum well layer (), which is undoped and which is arranged between two undoped barrier layers () adjoining the third quantum well layer.