The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
May. 08, 2008
Chang-bum Lee, Seoul, KR;
Young-soo Park, Yongin-si, KR;
Xianyu Wenxu, Suwon-si, KR;
Bo-soo Kang, Seoul, KR;
Seung-eon Ahn, Suwon-si, KR;
Chang-bum Lee, Seoul, KR;
Young-soo Park, Yongin-si, KR;
Xianyu Wenxu, Suwon-si, KR;
Bo-soo Kang, Seoul, KR;
Seung-eon Ahn, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided may be a resistive random access memory (RRAM) device and methods of manufacturing and operating the same. The resistive random access memory device may include at least one first electrode, at least one second electrode spaced apart from the at least one first electrode, a first structure including a first resistance-changing layer between the at least one first and second electrodes, and a first switching element electrically connected to the first resistance-changing layer, wherein at least one of the first and second electrodes include an alloy layer having a noble metal and a base metal.