Semiconductor device and related fabrication methods that use compressive material with a replacement gate technique

Abstract

A semiconductor device and related method of fabricating it are provided. An exemplary fabrication process begins by forming a gate structure overlying a layer of semiconductor material, the gate structure comprising a gate insulator overlying the layer of semiconductor material and comprising a temporary gate element overlying the gate insulator. The process continues by forming a layer of compressive material overlying the gate structure, and by removing a first portion of the compressive material to expose an upper surface of the temporary gate element, while leaving a second portion of the compressive material intact and external to sidewalls of the temporary gate element. Thereafter, at least a portion of the temporary gate element is removed, while leaving the second portion of the compressive material intact, resulting in a gate recess. The process continues by at least partially filling the gate recess with a gate electrode material.