The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
Feb. 12, 2009
Jusuke Ogura, Kawasaki, JP;
Hikaru Kokura, Kawasaki, JP;
Hideyuki Kojima, Kawasaki, JP;
Toru Anezaki, Kawasaki, JP;
Hiroyuki Ogawa, Kawasaki, JP;
Junichi Ariyoshi, Kawasaki, JP;
Jusuke Ogura, Kawasaki, JP;
Hikaru Kokura, Kawasaki, JP;
Hideyuki Kojima, Kawasaki, JP;
Toru Anezaki, Kawasaki, JP;
Hiroyuki Ogawa, Kawasaki, JP;
Junichi Ariyoshi, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method of manufacturing a semiconductor device includes forming an isolation region defining an active region in a semiconductor substrate, forming a first insulating film over the semiconductor substrate, forming a second insulating film having etching properties different from those of the first insulating film over the first insulating film, selectively removing the second insulating film from a first region over the active region and the isolation region by dry etching using a fluorocarbon-based etching gas, removing a residual film formed by the dry etching over the first insulating film by exposure in an atmosphere containing oxygen, and selectively removing the first insulating film from the first region by wet etching.