The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2012

Filed:

Jun. 27, 2008
Applicants:

Flavio Francesco Villa, Milan, IT;

Gabriele Barlocchi, Cornaredo, IT;

Pietro Corona, Milan, IT;

Benedetto Vigna, Pietrapertosa, IT;

Lorenzo Baldo, Bareggio, IT;

Inventors:

Flavio Francesco Villa, Milan, IT;

Gabriele Barlocchi, Cornaredo, IT;

Pietro Corona, Milan, IT;

Benedetto Vigna, Pietrapertosa, IT;

Lorenzo Baldo, Bareggio, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals.


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