The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2012

Filed:

Sep. 15, 2008
Applicants:

Yuuichirou Tabuchi, Nagoya, JP;

Masahiro Furukawa, Nagoya, JP;

Kenji Morimoto, Kasugai, JP;

Shinji Kawasaki, Nagoya, JP;

Inventors:

Yuuichirou Tabuchi, Nagoya, JP;

Masahiro Furukawa, Nagoya, JP;

Kenji Morimoto, Kasugai, JP;

Shinji Kawasaki, Nagoya, JP;

Assignee:

NGK Insulators, Ltd., Nagoya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C04B 33/32 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silicon carbide-based porous material is provided, including silicon carbide particles as an aggregate, metallic silicon and an oxide phase containing Si, Al and an alkaline earth metal. The silicon carbide-based porous material is high in porosity and strength and superior in oxidation resistance and thermal shock resistance and, when used as a filter, has a very low risk of fluid leakage causing defects such as cuts and the like, as well as a low pressure loss.


Find Patent Forward Citations

Tabuchi, Yuuichirou. (2012). Silicon carbide based porous material and method for production thereof (U.S. Patent No. 8173054). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8173054

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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