The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2012

Filed:

Dec. 02, 2010
Applicants:

Mitsutaka Nishijima, Saitama, JP;

Kenichi Toya, Saitama, JP;

Takashi Iwasa, Saitama, JP;

Inventors:

Mitsutaka Nishijima, Saitama, JP;

Kenichi Toya, Saitama, JP;

Takashi Iwasa, Saitama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 9/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

To provide a manufacturing method of a field emission cathode, which method exerts no adverse effect on element characteristics at the time when etching is performed with an ion beam. A sacrificial layermade of a thermosetting resin is formed on a gate electrode layer. An opening sectionis formed in the sacrificial layerand the gate electrode layerby irradiating a focused ion beam, and a hole sectionis formed by etching the insulating layerby using the sacrificial layerand the gate electrode layeras a mask. An emitter electrodeis formed in the hole section, and the emitter materialon the sacrificial layeris removed together with the sacrificial layeron the gate electrode layer


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