The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
Nov. 10, 2009
Kentaro Mizuno, Nisshin, JP;
Shoji Hashimoto, Seto, JP;
Hiromichi Yasuda, Gotemba, JP;
Hidenori Moriya, Susono, JP;
Kentaro Mizuno, Nisshin, JP;
Shoji Hashimoto, Seto, JP;
Hiromichi Yasuda, Gotemba, JP;
Hidenori Moriya, Susono, JP;
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi, JP;
Abstract
A temperature compensated force detection element is provided with a substrate, an insulation layer disposed above the substrate, and a p-type semiconductor layer disposed above the insulation layer, and a positive electrode and a negative electrode disposed apart from each other above the p-type semiconductor layer. A gauge portion being electrically connected to the positive electrode and having a higher impurity concentration than the p-type semiconductor layer, and an n-type region electrically connected to the negative electrode are formed in the p-type semiconductor layer.