The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8170076 B1

PDF
Full Text
Expired
Date of Patent:
May. 01, 2012

Filed:

Dec. 30, 2010
Applicants:

Toshiyuki Kawakami, Nara, JP;

Tomoki Ono, Pittsburgh, PA (US);

Shigetoshi Ito, Shijonawate, JP;

Inventors:

Toshiyuki Kawakami, Nara, JP;

Tomoki Ono, Pittsburgh, PA (US);

Shigetoshi Ito, Shijonawate, JP;

Assignee:

Sharp Kabushiki Kaisha, Osaka-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.


Find Patent Forward Citations

Kawakami, Toshiyuki. (2012). Gan laser element (U.S. Patent No. 8170076). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8170076

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…