The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Apr. 06, 2009
Virgile Javerliac, Sunnyvale, CA (US);
Neal Berger, Cupertino, CA (US);
Virgile Javerliac, Sunnyvale, CA (US);
Neal Berger, Cupertino, CA (US);
Crocus Technology S.A., Grenoble Cedex, FR;
Abstract
Magnetic random access memory (MRAM) cell with a thermally assisted switching writing procedure and methods for manufacturing and using same. The MRAM cell includes a magnetic tunnel junction that has at least a first magnetic layer, a second magnetic layer, and an insulating layer disposed between the first and a second magnetic layers. The MRAM cell further includes a select transistor and a current line electrically connected to the junction. The current line advantageously can support a plurality of MRAM operational functions. The current line can fulfill a first function for passing a first portion of current for heating the junction and a second function for passing a second portion of current in order to switch the magnetization of the first magnetic layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile