The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2012

Filed:

Apr. 21, 2009
Applicants:

Chih-feng Huang, Chupei, TW;

Kuo-chin Chiu, Xinfeng Township, TW;

Inventors:

Chih-Feng Huang, Chupei, TW;

Kuo-Chin Chiu, Xinfeng Township, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/335 (2006.01); H02M 7/21 (2006.01);
U.S. Cl.
CPC ...
Abstract

A power transistor chip and an application circuit thereof have a junction field effect transistor to act as a start-up circuit of an AC/DC voltage converter. The start-up circuit can be turned off after the PWM circuit of the AC/DC voltage converter operates normally to conserve the consumption of the power. Besides, the junction field effect transistor is built in the power transistor chip. Because the junction field effect transistor is fabricated with the same manufacturing process as the power transistor, it is capable of simplifying the entire process and lowering the production cost due to no additional mask and manufacturing process.


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Huang, Chih-Feng. (2012). Power transistor chip with built-in junction field effect transistor and application circuit thereof (U.S. Patent No. 8169803). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8169803

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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