The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Oct. 20, 2008
Ki-hwan Kim, Daejeon, KR;
Young-soo Park, Seoul, KR;
Myung-jae Lee, Suwon-si, KR;
Xianyu Wenxu, Suwon-si, KR;
Seung-eon Ahn, Seoul, KR;
Chang-bum Lee, Busan, KR;
Ki-hwan Kim, Daejeon, KR;
Young-soo Park, Seoul, KR;
Myung-jae Lee, Suwon-si, KR;
Xianyu Wenxu, Suwon-si, KR;
Seung-eon Ahn, Seoul, KR;
Chang-bum Lee, Busan, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are resistive random access memories (RRAMs) and methods of manufacturing the same. A RRAM includes a storage node including a variable resistance layer, a switching device connected to the storage node, and a protective layer covering an exposed part of the variable resistance layer. The protective layer includes at least one of aluminum oxide and titanium oxide. The variable resistance layer is a metal oxide layer.