The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Apr. 30, 2009
Hiroshi Furuta, Kanagawa, JP;
Shouzou Uchida, Kanagawa, JP;
Muneaki Matsushige, Kanagawa, JP;
Junji Monden, Kanagawa, JP;
Hiroshi Furuta, Kanagawa, JP;
Shouzou Uchida, Kanagawa, JP;
Muneaki Matsushige, Kanagawa, JP;
Junji Monden, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
A MISFET includes a drain diffusion layer of a first conductivity type, a source diffusion layer of the first conductivity type, a gate electrode, and a substrate/well of a second conductivity type. In the MISFET, first diffusion layers of the first conductivity type are provided at two or more positions at predetermined intervals with an isolation therebetween respectively. The two or more positions are facing at least two sides of the element isolation insulation around the drain diffusion layer. A second diffusion layer of the second conductivity type is provided so as to be close to or to come in contact with the source diffusion layer.