The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Mar. 12, 2010
Tatsuo Naijo, Hyogo-ken, JP;
Tatsuo Naijo, Hyogo-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes: a drift layer of a first conductivity type; a base layer of a second conductivity type provided on the drift layer; an emitter layer of the first conductivity type provided in part of an upper portion of the base layer; a buffer layer of the first conductivity type provided below the drift layer; a high-resistance layer of the first conductivity type provided below the buffer layer; a collector layer of the second conductivity type provided in a partial region on a lower surface of the high-resistance layer; a contact layer of the first conductivity type provided in another partial region on the lower surface of the high-resistance layer; a trench gate electrode extending through the emitter layer and the base layer into the drift layer; and a gate insulating film provided between the emitter layer, the base layer, and the drift layer on one hand and the trench gate electrode on the other.