The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Feb. 26, 2010
Jang-hyun You, Seoul, KR;
Jin-taek Park, Suwon-si, KR;
Young-woo Park, Seoul, KR;
Jung-dal Choi, Seoul, KR;
Jang-hyun You, Seoul, KR;
Jin-taek Park, Suwon-si, KR;
Young-woo Park, Seoul, KR;
Jung-dal Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A non-volatile memory device includes a semiconductor layer including a cell region and a peripheral region, a cell region gate structure disposed in the cell region of the semiconductor layer, and wherein the cell region gate structure includes a tunneling insulating layer and a first blocking insulating layer, a second blocking insulating layer, and a third blocking insulating layer. The no-volatile memory device further includes a peripheral region gate structure formed in the peripheral region of the semiconductor layer. The peripheral region gate structure includes a first peripheral region insulating layer including a same material as a material included in the tunneling insulating layer and a second peripheral region insulating layer including a same material as a material included in the third blocking insulating layer.