The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2012

Filed:

Oct. 31, 2007
Applicants:

MI Jin Kim, Daejeon, KR;

Bong Ki Mheen, Daejeon, KR;

Young Joo Song, Daejeon, KR;

Seong Su Park, Daejeon, KR;

Inventors:

Mi Jin Kim, Daejeon, KR;

Bong Ki Mheen, Daejeon, KR;

Young Joo Song, Daejeon, KR;

Seong Su Park, Daejeon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are an image sensor and a method of sensing the same. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device.


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