The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Oct. 21, 2010
Masao Yamane, Takasaki, JP;
Atsushi Kurokawa, Takasaki, JP;
Shinya Osakabe, Takasaki, JP;
Eigo Tange, Takasaki, JP;
Yasushi Shigeno, Maebashi, JP;
Hiroyuki Takazawa, Hino, JP;
Masao Yamane, Takasaki, JP;
Atsushi Kurokawa, Takasaki, JP;
Shinya Osakabe, Takasaki, JP;
Eigo Tange, Takasaki, JP;
Yasushi Shigeno, Maebashi, JP;
Hiroyuki Takazawa, Hino, JP;
Murata Manufacturing Co., Ltd., Kyoto, JP;
Abstract
The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrodeis formed in an active region defined by an element separation portionon a main surface of a substratecomprising GaAs. The gate electrodeis patterned so as to extend in the vertical direction of the page surface between source electrodesand drain electrodes, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrodedisposed outside the active region is reduced, and the area of a gate padA is reduced.