The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
May. 26, 2005
Kenji Kohiro, Tsukuba, JP;
Tomoyuki Takada, Tsukuba, JP;
Kazumasa Ueda, Tsuchiura, JP;
Masahiko Hata, Tsuchiura, JP;
Kenji Kohiro, Tsukuba, JP;
Tomoyuki Takada, Tsukuba, JP;
Kazumasa Ueda, Tsuchiura, JP;
Masahiko Hata, Tsuchiura, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Abstract
A compound semiconductor epitaxial substrate and a process for producing the same are provided. The compound semiconductor epitaxial substrate comprises a single crystal substrate, a lattice mismatch compound semiconductor layer and a stress compensation layer, wherein the lattice mismatch compound semiconductor layer and the stress compensation layer are disposed on the identical surface side of the single crystal substrate, there is no occurrence of lattice relaxation in the lattice mismatch compound semiconductor layer, as well as the stress compensation layer, and Ls representing the lattice constant of the single crystal substrate, Lm representing the lattice constant of the lattice mismatch compound semiconductor layer, and Lc representing the lattice constant of the stress compensation layer satisfy the formula (1a) or (1b).Lm Lm>Ls>Lc  (2a)