The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Apr. 13, 2010
Applicants:
Edward Yi Chang, Hsinchu, TW;
Chien-i Kuo, Hsinchu, TW;
Heng-tung Hsu, Jhongli, TW;
Inventors:
Assignee:
National Chiao Tung University, Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/338 (2006.01);
U.S. Cl.
CPC ...
Abstract
A high electron mobility transistor includes a substrate, a buffer layer, a channel layer, a spacer layer, a schottky layer and a cap layer. The buffer layer is formed on the substrate. The channel layer is formed on the buffer layer, in which the channel layer comprises a superlattice structure formed with a plurality of indium gallium arsenide thin films alternately stacked with a plurality of indium arsenide thin films. The spacer layer is formed on the channel layer. The schottky layer is formed on the spacer layer. The cap layer is formed on the schottky layer.