The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Sep. 15, 2010
Masafumi Sano, Yokohama, JP;
Katsumi Nakagawa, Zama, JP;
Hideo Hosono, Yokohama, JP;
Toshio Kamiya, Yokohama, JP;
Kenji Nomura, Yokohama, JP;
Masafumi Sano, Yokohama, JP;
Katsumi Nakagawa, Zama, JP;
Hideo Hosono, Yokohama, JP;
Toshio Kamiya, Yokohama, JP;
Kenji Nomura, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Tokyo Institute of Technology, Tokyo, JP;
Abstract
A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10/cm, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.