The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Sep. 13, 2010
Masayuki Asai, Toyama, JP;
Masayuki Asai, Toyama, JP;
Hitachi Kokusai Electric, Inc., Tokyo, JP;
Abstract
There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus by which the quality of a silicon nitride film can be improved. The method comprises: (a) supplying a silicon-containing gas into a process chamber accommodating a substrate in a heated state; (b) switching between an exhaust stop state and an exhaust operation state at least two times while a nitrogen-containing gas is supplied into the process chamber so as to vary an inside pressure of the process chamber such that a maximum inside pressure of the process chamber is at least twenty times higher than a minimum inside pressure of the process chamber. The steps (a) and (b) are alternately repeated to form a silicon nitride film on the substrate.