The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Apr. 30, 2008
Nobuhiko Umezu, Kanagawa, JP;
Koichi Tsukihara, Kanagawa, JP;
Goh Matsunobu, Kanagawa, JP;
Yoshio Inagaki, Kanagawa, JP;
Koichi Tatsuki, Kanagawa, JP;
Shin Hotta, Tokyo, JP;
Katsuya Shirai, Kanagawa, JP;
Nobuhiko Umezu, Kanagawa, JP;
Koichi Tsukihara, Kanagawa, JP;
Goh Matsunobu, Kanagawa, JP;
Yoshio Inagaki, Kanagawa, JP;
Koichi Tatsuki, Kanagawa, JP;
Shin Hotta, Tokyo, JP;
Katsuya Shirai, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A gate insulating film () is formed on a substrate () so as to cover a gate electrode (), and an amorphous silicon film (semiconductor thin film) () is further formed. A light absorption layer () is formed thereon through a buffer layer (). Energy lines Lh are applied to the light absorption layer () from a continuous-wave laser such as a semiconductor laser. This oxidizes only a surface side of the light absorption layer Lh and produces a beautiful crystalline silicon film () obtained by crystallizing the amorphous silicon film () using heat generated by thermal conversion of the energy lines Lh at the light absorption layer () and heat of the oxidation reaction. This provides a method for crystallizing a thin film with good controllability at low costs achieved with simpler process.