The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Sep. 21, 2009
Wei-chieh Lin, Hsinchu, TW;
Ho-tai Chen, Taipei County, TW;
Jen-hao Yeh, Kaohsiung County, TW;
Li-cheng Lin, Taipei, TW;
Shih-chieh Hung, Changhua County, TW;
Wei-Chieh Lin, Hsinchu, TW;
Ho-Tai Chen, Taipei County, TW;
Jen-Hao Yeh, Kaohsiung County, TW;
Li-Cheng Lin, Taipei, TW;
Shih-Chieh Hung, Changhua County, TW;
Anpec Electronics Corporation, Hsinchu Science Park, Hsin-Chu, TW;
Abstract
An integrated structure of an IGBT and a diode includes a plurality of doped cathode regions, and a method of forming the same is provided. The doped cathode regions are stacked in a semiconductor substrate, overlapping and contacting with each other. As compared with other doped cathode regions, the higher a doped cathode region is disposed, the larger implantation area the doped cathode region has. The doped cathode regions and the semiconductor substrate have different conductive types, and are applied as a cathode of the diode and a collector of the IGBT. The stacked doped cathode regions can increase the thinness of the cathode, and prevent the wafer from being overly thinned and broken.