The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Jan. 10, 2011
James W. Adkisson, Jericho, VT (US);
Panglijen Candra, Williston City, VT (US);
Thomas J. Dunbar, Burlington, VT (US);
Jeffrey P. Gambino, Westford, VT (US);
Mark D. Jaffe, Shelburne, VT (US);
Robert K. Leidy, Burlington, VT (US);
Yen L. Lim, Essex Junction, VT (US);
James W. Adkisson, Jericho, VT (US);
Panglijen Candra, Williston City, VT (US);
Thomas J. Dunbar, Burlington, VT (US);
Jeffrey P. Gambino, Westford, VT (US);
Mark D. Jaffe, Shelburne, VT (US);
Robert K. Leidy, Burlington, VT (US);
Yen L. Lim, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Systems and methods simultaneously form first openings and second openings in a substrate. The first openings are formed smaller than the second openings. The method also simultaneously forms a first material in the first openings and the second openings. The first material fills the first openings, and the first material lines the second openings. The method forms a second material different than the first material in the second openings. The second material fills the second openings. The method forms a plurality of integrated circuit structures over the first material and the second material within the second openings. The method applies mechanical stress to the substrate to cause the substrate to split along the first openings.