The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Mar. 28, 2008
Jinqiu Zhang, Fremont, CA (US);
Liubo Hong, San Jose, CA (US);
Yong Shen, Saratoga, CA (US);
Donghong LI, Fremont, CA (US);
Jinqiu Zhang, Fremont, CA (US);
Liubo Hong, San Jose, CA (US);
Yong Shen, Saratoga, CA (US);
Donghong Li, Fremont, CA (US);
Western Digital (Fremont), LLC, Fremont, CA (US);
Abstract
A method and system for providing a PMR transducer including an intermediate layer. The method and system include providing a hard mask layer on the intermediate layer. The hard mask layer is for a reactive ion etch of the intermediate layer. The method and system also include providing a bottom antireflective coating (BARC) layer on the hard mask layer. The BARC layer is also a masking layer for the hard mask layer. The method and system also include forming a trench in the intermediate layer using at least one reactive ion etch (RIE). The trench has a bottom and a top wider than the bottom. The method and system also include providing a PMR pole. At least a portion of the PMR pole resides in the trench.