The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Dec. 26, 2007
Hee Bok Kang, Cheongju-si, KR;
Suk Kyoung Hong, Gwacheon-si, KR;
Hee Bok Kang, Cheongju-si, KR;
Suk Kyoung Hong, Gwacheon-si, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A semiconductor memory device with a ferroelectric device comprises a channel region, a drain region and a source region formed in a substrate, a ferroelectric layer formed over the channel region, and a word line formed over the ferroelectric layer. A different channel resistance is induced to the channel region depending on a polarity state of the ferroelectric layer, a data read operation is performed by a cell sensing current value differentiated depending on the polarity state of the ferroelectric layer while a read voltage is applied to the word line and a sensing bias voltage is applied to one of the drain region and the source region, and a data write operation is performed by a polarity of the ferroelectric layer changed depending on a voltage applied to the word line, the drain region and the source region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile