The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Aug. 05, 2009
Applicant:
Myung-il Kang, Yongin-si, KR;
Inventor:
Myung-Il Kang, Yongin-si, KR;
Assignee:
Dongbu HiTek Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a semiconductor device includes forming an N-well and a P-well formed in a semiconductor substrate. An isolation layer may be formed in the semiconductor substrate. At least one dummy active pattern may be formed in a boundary area between the N-well and the P-well. A salicide blocking layer may be over the upper surface of the at least one dummy active pattern. A non-salicide region may be formed over the upper surface of the at least one dummy active pattern by carrying out a salicide process over the semiconductor substrate provided with the salicide blocking layer.