The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Dec. 18, 2009
Nobuo Kaneko, Niiza, JP;
Nobuo Kaneko, Niiza, JP;
Sanken Electric Co., Ltd., Saitama, JP;
Abstract
An object of the present invention is to reduce on-state resistance and increases reliability in a semiconductor device having an electrode formed in a recessed structure. As illustrated in FIG.B, a first insulating layeris formed. Then, as illustrated in FIG.C, a photolithography process is carried out to form a photoresist pattern. Subsequently, as illustrated in FIG.D, dry etching is applied to the first insulating layer. Then, as illustrated in FIG.E, a laminated semiconductor structure is etched. Next, in this state, wet etching is applied to the first insulating layeras illustrated in FIG.F. Next, in this state, an electrode materialis formed on the entire exposed surface as illustrated in FIG.G. Finally, as illustrated inH, the photoresist patternis removed.