The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Aug. 22, 2006
Tetsuya Hayashi, Yokosuka, JP;
Yoshio Shimoida, Yokosuka, JP;
Masakatsu Hoshi, Yokohama, JP;
Hideaki Tanaka, Yokohama, JP;
Shigeharu Yamagami, Yokohama, JP;
Tetsuya Hayashi, Yokosuka, JP;
Yoshio Shimoida, Yokosuka, JP;
Masakatsu Hoshi, Yokohama, JP;
Hideaki Tanaka, Yokohama, JP;
Shigeharu Yamagami, Yokohama, JP;
Nissan Motor Co., Ltd., Yokohama-shi, JP;
Abstract
A semiconductor device includes: a semiconductor base; a hetero semiconductor region which is in contact with the semiconductor base and which has a band gap different from that of the semiconductor base; a first electrode connected to the hetero semiconductor region; and a second electrode forming an ohmic contact to the semiconductor base. The hetero semiconductor region includes a laminated hetero semiconductor region formed by laminating a plurality of semiconductor layers in which crystal alignment is discontinuous at a boundary between at least two layers.