The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Mar. 25, 2010
Meng-chi Liou, Taoyuan County, TW;
Li-hsuan Chen, Taipei County, TW;
Meng-Chi Liou, Taoyuan County, TW;
Li-Hsuan Chen, Taipei County, TW;
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
Abstract
In a fabricating method of a pixel structure, a scan line and a gate electrode are formed in each pixel area of a substrate. A gate insulation layer is formed to cover the scan line and gate electrode. A semiconductor layer is formed on the gate insulation layer above the gate electrode. A data line, source and drain are formed in each pixel area. A first passivation layer covers the data line, source and drain. A common line is formed on the first passivation layer and overlaps with at least a portion of the data line. A common electrode is formed on and electrically connected with the common line. A second passivation layer covers the common electrode and common line. A contact window is formed in the second passivation layer above the drain to expose the drain. A pixel electrode is electrically connected with the drain through the contact window.