The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2012

Filed:

Jan. 10, 2011
Applicants:

Shoichi Uchiyama, Hamamatsu, JP;

Yasufumi Takagi, Hamamatsu, JP;

Minoru Niigaki, Hamamatsu, JP;

Minoru Kondo, Hamamatsu, JP;

Itaru Mizuno, Hamamatsu, JP;

Inventors:

Shoichi Uchiyama, Hamamatsu, JP;

Yasufumi Takagi, Hamamatsu, JP;

Minoru Niigaki, Hamamatsu, JP;

Minoru Kondo, Hamamatsu, JP;

Itaru Mizuno, Hamamatsu, JP;

Assignee:

Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/244 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light-emitting body of rapid speed of response and high light emission intensity, and an electron beam detector, scanning electron microscope and mass spectroscope using this are provided. In the light-emitting bodyaccording to the present invention, when fluorescence is emitted by a nitride semiconductor layerformed on one faceof a substratein response to incidence of electrons, at least some of this fluorescence is transmitted through this substrate, whereby that fluorescence is emitted from the other faceof the substrate. The response speed of this fluorescence is not more than μsec order. Also, the intensity of emission of this fluorescence is almost identical to that of a conventional P47 phosphor. Specifically, with this light-emitting body, a response speed and light emission intensity are obtained that are fully satisfactory for application to a scanning electron microscope or mass spectroscope. In addition, a cap layercontributes to improvement in the persistence rate of light emission in the nitride semiconductor layer, so, with this light-emitting body, not only high-speed response and high light emission intensity are obtained, but also an excellent persistence rate.


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