The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2012

Filed:

Apr. 07, 2009
Applicants:

Stephen Y. Chou, Princeton, NJ (US);

Ying Wang, Princeton, NJ (US);

Xiaogan Liang, Plainsboro, NJ (US);

Yixing Liang, Princeton, NJ (US);

Inventors:

Stephen Y. Chou, Princeton, NJ (US);

Ying Wang, Princeton, NJ (US);

Xiaogan Liang, Plainsboro, NJ (US);

Yixing Liang, Princeton, NJ (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/477 (2006.01);
U.S. Cl.
CPC ...
Abstract

In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.


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