The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Dec. 13, 2007
Jung Geun Kim, Seoul, KR;
Eun Soo Kim, Incheon-si, KR;
Seung Hee Hong, Seoul, KR;
Suk Joong Kim, Icheon-si, KR;
Jung Geun Kim, Seoul, KR;
Eun Soo Kim, Incheon-si, KR;
Seung Hee Hong, Seoul, KR;
Suk Joong Kim, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method of forming an isolation layer of a semiconductor device is disclosed herein, the method comprising the steps of providing a semiconductor substrate in which a tunnel insulating layer and a charge storage layer are formed on an active area and a trench is formed on an isolation area; forming a first insulating layer for filling a lower portion of the trench; forming a porous second insulating layer on the first insulating layer for filling a space between the charge storage layers; forming a third insulating layer on a side wall of the trench and the second insulating layer, the third insulating layer having a density higher than that of the second insulating layer; and forming a porous fourth insulating layer for filling the trench.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile