The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2012

Filed:

Dec. 23, 2009
Applicants:

Seok Woo Lee, Bucheon-si, KR;

Seung Chan Choi, Goyang-si, KR;

Inventors:

Seok Woo Lee, Bucheon-si, KR;

Seung Chan Choi, Goyang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing an LCD device is disclosed. The LCD device manufacturing method includes: forming first and second active patterns on P-channel and N-channel thin film transistor formation regions of a substrate using a first masking process, respectively; forming a first gate electrode on the P-channel thin film transistor formation region of the substrate using a second masking process; forming a second gate electrode on the N-channel thin film transistor formation region of the substrate using a third masking process; forming first contact holes partially exposing the respective N and P source regions and second contact holes partially exposing the respective N and P drain regions, using a fourth masking process; forming N and P source electrodes connected to the N and P source regions, and N and P drain electrodes connected to the N and P drain regions, using a fifth masking process; simultaneously forming third contact holes and a common electrode using a sixth masking process; forming fourth contact holes, which expose the respective N and P drain electrodes, using a seventh masking process; and forming a pixel electrode using a eighth masking process.


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