The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2012
Filed:
Jun. 13, 2008
Chang Geun Ahn, Daejeon, KR;
Chan Woo Park, Daejeon, KR;
Jong Heon Yang, Daejeon, KR;
IN Bok Baek, Cheongju, KR;
Chil Seong Ah, Daejeon, KR;
Han Young Yu, Daejeon, KR;
An Soon Kim, Daejeon, KR;
Tae Youb Kim, Seoul, KR;
Moon Gyu Jang, Daejeon, KR;
Seon Hee Park, Daejeon, KR;
Chang Geun Ahn, Daejeon, KR;
Chan Woo Park, Daejeon, KR;
Jong Heon Yang, Daejeon, KR;
In Bok Baek, Cheongju, KR;
Chil Seong Ah, Daejeon, KR;
Han Young Yu, Daejeon, KR;
An Soon Kim, Daejeon, KR;
Tae Youb Kim, Seoul, KR;
Moon Gyu Jang, Daejeon, KR;
Seon Hee Park, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.