The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2012

Filed:

Jul. 09, 2008
Applicants:

Hiroshi Kishi, Akita-ken, JP;

Minoru Kanda, Akita-ken, JP;

Inventors:

Hiroshi Kishi, Akita-ken, JP;

Minoru Kanda, Akita-ken, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 11/00 (2006.01); C30B 15/00 (2006.01); C30B 21/06 (2006.01); C30B 27/02 (2006.01); C30B 28/10 (2006.01); C30B 30/04 (2006.01); C30B 19/00 (2006.01); C30B 9/00 (2006.01); C30B 17/00 (2006.01); C30B 21/02 (2006.01); C30B 28/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 μm/hr or less, using a silica glass crucible for the pulling up of silicon single crystals, wherein the area of crystalline silica formed by crystallization of amorphous silica is restricted to 10% or less of the crucible inner surface area, or the density of pits formed from open bubbles on the crucible inner surface is restricted to 0.01 to 0.2 counts/mm.


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