The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2012

Filed:

Nov. 20, 2006
Applicants:

Dong Pan, Andover, MA (US);

Jifeng Liu, Cambridge, MA (US);

Jurgen Michel, Arlington, MA (US);

Lionel C. Kimerling, Concord, MA (US);

Inventors:

Dong Pan, Andover, MA (US);

Jifeng Liu, Cambridge, MA (US);

Jurgen Michel, Arlington, MA (US);

Lionel C. Kimerling, Concord, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/035 (2006.01); G02B 6/12 (2006.01); G02B 6/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

An optoelectronic device includes an input waveguide structure that receives an input optical signal. A GeSi/Si waveguide structure receives from the input waveguide the input optical signal and performs selective optoelectronic operations on the input optical signal. The GeSi/Si waveguide structure outputs an optical or electrical output signal associated with the selective optoelectronic operations performed on the input optical signal. An output waveguide structure receives the output optical signal from the GeSi/Si waveguide structure and provides the optical output signal for further processing.


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Pan, Dong. (2012). High speed and low loss gesi/si electro-absorption light modulator and method of fabrication using selective growth (U.S. Patent No. 8160404). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8160404

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