The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Mar. 25, 2010
Applicants:
Pavel Poplevine, Burlingame, CA (US);
Ernes Ho, Sunnyvale, CA (US);
Umer Khan, Santa Clara, CA (US);
Andrew J. Franklin, Santa Clara, CA (US);
Inventors:
Pavel Poplevine, Burlingame, CA (US);
Ernes Ho, Sunnyvale, CA (US);
Umer Khan, Santa Clara, CA (US);
Andrew J. Franklin, Santa Clara, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
An NVM cell design enables direct reading of cell output voltage to determine data stored in the cell, while providing low current consumption and a simple program sequence that utilizes reverse Fowler-Nordheim tunneling.
Poplevine, Pavel. (2012). Method of directly reading output voltage to determine data stored in a non-volatile memory cell (U.S. Patent No. 8159877). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8159877
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile