The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Apr. 04, 2008
Applicant:
William Xia, San Diego, CA (US);
Inventor:
William Xia, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cells are disclosed. The bit cells include a source line formed in a first plane and a bit line formed in a second plane. The bit line has a longitudinal axis that is parallel to a longitudinal axis of the source line, and the source line overlaps at least a portion of the bit line.
Xia, William. (2012). Array structural design of magnetoresistive random access memory (mram) bit cells (U.S. Patent No. 8159870). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8159870
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile