The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 17, 2012

Filed:

Mar. 17, 2009
Applicants:

Wei-chuan Lin, Shen-zhen, CN;

Lung-chuan Chang, Shen-zhen, CN;

Inventors:

Wei-Chuan Lin, Shen-zhen, CN;

Lung-chuan Chang, Shen-zhen, CN;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1333 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a pixel layout structure capable of increasing the capability of detecting amorphous silicon (a-Si) residue defects and a method for manufacturing the same. Wherein, an a-Si dummy layer is disposed on either one side or both sides of each data line. The design of such an a-Si dummy layer is utilized, so that in an existing testing conditions (by making use of an existing automatic array tester in carrying out the test), in case that there exists an a-Si residue in a pixel, the pixel having defects can be detected through an enhanced capacitance coupling effect and an electron conduction effect. Therefore, through the application of the above-mentioned design, the capability of an automatic array tester can effectively be increased in detecting a defective pixel having a-Si residues.


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