The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Oct. 10, 2008
Applicants:
Milton Feng, Champaign, IL (US);
Nick Holonyak, Jr., Urbana, IL (US);
Inventors:
Milton Feng, Champaign, IL (US);
Nick Holonyak, Jr., Urbana, IL (US);
Assignee:
The Board of Trustees of the University of Illinois, Urbana, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H01L 29/66 (2006.01); H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract
A field-effect transistor device, including: a semiconductor heterostructure comprising, in a vertically stacked configuration, a semiconductor gate layer between semiconductor source and drain layers, the layers being separated by heterosteps; the gate layer having a thickness of less than about 100 Angstroms; and source, gate, and drain electrodes respectively coupled with said source, gate, and drain layers. Separation of the gate by heterosteps, rather than an oxide layer, has very substantial advantages.