The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Aug. 04, 2010
Nicolas Abelé, Paris, FR;
Pascal Ancey, Revel, FR;
Alexandre Talbot, Grenoble, FR;
Karim Segueni, Saint Sauveur, FR;
Guillaume Bouche, Grenoble, FR;
Thomas Skotnicki, Crolles-Monfort, FR;
Stéphane Monfray, Grenoble, FR;
Fabrice Casset, Tencin, FR;
Nicolas Abelé, Paris, FR;
Pascal Ancey, Revel, FR;
Alexandre Talbot, Grenoble, FR;
Karim Segueni, Saint Sauveur, FR;
Guillaume Bouche, Grenoble, FR;
Thomas Skotnicki, Crolles-Monfort, FR;
Stéphane Monfray, Grenoble, FR;
Fabrice Casset, Tencin, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
STMicroelectronics S.A., Montrouge, FR;
Abstract
A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.